Quantum Spin Qubit Integration

About this role

About GlobalFoundries GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world's most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and gives customers the power to shape their markets. For more information, visit www.gf.com.

Introduction The Spin Qubit Integration (MTS) role is a technical contributor within the GF Labs / Technology Development organization focused on enabling scalable semiconductor spin-based quantum computing hardware. This position supports integration of isotopically enriched silicon channels, quantum-dot gate stacks, low-noise interfaces, charge-sensing/read-out structures, cryogenic test vehicles, and manufacturable CMOS-compatible process flows.

Job Summary As a Member of Technical Staff, this role contributes to process and module integration for spin-qubit platforms across device, gate-stack, semiconductor materials, BEOL/interconnect, packaging, and cryogenic characterization domains. The position emphasizes hands-on execution, data-driven problem solving, and cross-functional collaboration to improve charge noise, device uniformity, yield, variability, and scalability.

Essential Responsibilities • Support integration of spin-qubit hardware, including isotopically enriched silicon channels, quantum-dot gate stacks, charge sensors, gate fanout, BEOL modules, cryogenic interfaces, and advanced packaging.

• Develop and execute CMOS-compatible process integration flows for quantum-dot devices, including channel formation, gate dielectric/metal stacks, fine-pitch gate definition, isolation, contacts, and module interactions.

• Improve low-noise device and interconnect structures for cryogenic operation, including charge-sensing structures, RF reflectometry interfaces, bias routing, filtering structures, and packaging interfaces.

• Analyze process and device performance drivers such as charge noise, disorder, interface traps, variability, contamination, leakage, mobility degradation, valley splitting, and thermalization.

• Execute DOEs and analyze inline, physical, electrical, RF/microwave, transport, and cryogenic data to guide integration improvements.

• Work cross-functionally with device, process, metrology, packaging, reliability, design enablement, and cryogenic-test teams to deliver integration milestones.

• Translate spin-qubit requirements into manufacturable flows, design rules, materials specifications, characterization plans, and yield-learning actions.

• Document process flows, assumptions, materials tradeoffs, characterization results, and technical learnings for scalable development and knowledge transfer.

Required Qualifications • Education: BS in Electrical Engineering, Materials Science, Chemical Engineering, Physics, Applied Physics, or related field.

• Years of Experience: 5+ years in semiconductor process, device, materials, quantum device, or integration engineering.

• Significant experience with semiconductor device integration, advanced gate stacks, nanoscale device structures, or cryogenic device/quantum-hardware integration.

• Experience with silicon spin-qubit, quantum-dot, MOS, Si/SiGe, FD-SOI, or related semiconductor device platforms.

• Experience with electrical, transport, RF/microwave, or cryogenic characterization of semiconductor devices, quantum dots, charge sensors, or related structures.

• Experience integrating or characterizing structures for qubit control/read-out, including charge sensing, RF reflectometry, gate-based sensing, or spin/charge transport measurements.

• Strong data analysis, problem-solving, debugging, communication, and cross-functional collaboration skills.

• Travel: ~10%.

Preferred Qualifications • MS or PhD in Electrical Engineering, Physics, Applied Physics, Materials Science, or related field.

• Experience with isotopically enriched silicon, Si/SiGe heterostructures, quantum wells, MOS quantum dots, FD-SOI devices, or CMOS-compatible spin-qubit process flows.

• Experience with nanoscale patterning and process modules such as e-beam or advanced optical lithography, thin-film deposition, ALD, oxidation, wet/dry etch, CMP, implants, and anneals.

• Familiarity with spin-qubit device physics, including spin resonance, spin shuttling, exchange coupling, valley splitting, charge noise, and spin-dependent read-out.

• Experience with cryogenic probing, dilution refrigerator measurements, RF reflectometry, S-parameters, low-noise transport, charge sensing, or automated qubit/device tuning.

• Experience with BEOL integration, low-parasitic interconnect, fine-pitch routing, TSVs, flip-chip, interposers, thermalization structures, or cryogenic packaging.

• Familiarity with cryo-CMOS control/read-out interfaces, multiplexing, compact device layouts, quantum device TCAD/modeling, or design-rule development for qubit arrays.

• Experience with DOE, yield learning, variability modeling, root-cause analysis, SPC, or reliability assessment in R&D or manufacturing environments.

Additional Information GlobalFoundries is an equal opportunity employer, cultivating a diverse and inclusive workforce. We believe having a multicultural workplace enhances productivity, efficiency and innovation whilst our employees feel truly respected, valued and heard. As an affirmative employer, all qualified applicants are considered for employment regardless of age, ethnicity, marital status, citizenship, race, religion, political affiliation, gender, sexual orientation and medical and/or physical abilities. All offers of employment with GlobalFoundries are conditioned upon the successful completion of background checks, medical screenings as applicable and subject to the respective local laws and regulations.  

Expected Salary Range $98,000.00 - $176,000.00 The exact Salary wil

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